国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2） C30（2）
IPC小类 C01B（2）
IPC C01B031/04（2） C30B029/02（2）
发明人
公开年 2009（2）
申请年 2009（2）
专利权人

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y

Making intercalation electrode for electrochemical cell, involves forming graphene planes perpendicular to a current collector substrate and coextensive with electrode surface region by chemical vapor deposition using carbon gas composition.

LEV L C, SACHDEV A K, VERBRUGGE M W, XIAO X, XIAO Y, SHAW X