国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2） C30（2）
IPC小类 C01B（2）
IPC
发明人
公开年 2013（2）
申请年 2011（2）
专利权人

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D