国家/地区 台湾（5）
IPC部 C（5）
IPC大类 C30（5） C01（4） C23（2）
IPC小类 C30B（5）
IPC C01B031/04（4） C30B023/08（3） C01B032/184（2）
C23C016/02（2）
发明人 CHANG C（3） HUANG K（3） KOU C（3）
CHANG C C（2） HUANG K P（2） KOU C S（2）
公开年 2017（3） 2016（2）
申请年 2015（5）
专利权人 IND TECHNOLO.（3）

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Graphene flower and composite material which includes introducing a carbon hydrogen gas and a assistance gas into a transformer coupled plasma equipment.

HUANG K, CHANG C, KOU C, HUANG K P, CHANG C C, KOU C S

Method for manufacturing graphene flower which includes introducing a carbon hydrogen gas.

HUANG K, CHANG C, KOU C

A method of diamond nucleation comprises,providing substrate and forming graphene layer on surface of the substrate.

TZENG Y, CHANG C, TZENG Y H

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y