国家/地区 英国（2）
IPC部 C（2）
IPC大类 C01（2） G01（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/182（2）
发明人
公开年
申请年
专利权人

Graphene-based voltage-mode photosensitive device i.e. photosensitive FET, has photoactive semiconducting material and two-dimensional material configured such that non-screening gate voltage interval is provided.

BESSONOV A, COLLI A, ALLEN M

Reduced graphene oxide (RGO) flakes percolation network e.g. for sensor, has RGO ink including overlapping stacked arrangement of RGO flakes that are functionalized to facilitate detectable changes in flow of charge carriers.

SPIGONE E, HAQUE S M, KIVIOJA J