国家/地区 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 G01（3） H01（3） C01（2）
IPC小类 G01J（3）
IPC H01L027/144（3）
发明人
公开年
申请年
专利权人

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Graphene-based voltage-mode photosensitive device i.e. photosensitive FET, has photoactive semiconducting material and two-dimensional material configured such that non-screening gate voltage interval is provided.

BESSONOV A, COLLI A, ALLEN M

Graphene photodetector for detecting photons comprises a waveguide, graphene layer disposed proximate to waveguide, and insulating layer disposed between waveguide and at least one graphene layer.

ENGLUND D, SHIUE R, GAN X