国家/地区 美国（2）
IPC部 C（3）
IPC大类 G01（3） C01（2）
IPC小类 G01J（3）
IPC
发明人
公开年 2019（3）
申请年
专利权人

Graphene-based voltage-mode photosensitive device i.e. photosensitive FET, has photoactive semiconducting material and two-dimensional material configured such that non-screening gate voltage interval is provided.

BESSONOV A, COLLI A, ALLEN M

Preparation of metal-structured tungsten-selenide-redox graphene composite structure includes preparing precursor aqueous solution of tungsten diselenide film, performing hydro-thermal treatment, filtering, washing and drying.

HE H, HE Z, SHEN Q

Carrier for Raman spectroscopy e.g. detection, comprises substrate having metal surface, portions of neighboring graphene islands not connected to form several gaps and metal particles arranged at gaps between islands on substrate.

TZENG Y, CHEN Y