国家/地区 韩国（4） 美国（4）
IPC部 C（4） H（4） B（2）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C016/26（4） C01B031/02（3） B05D005/12（2）
B32B009/00（2） B82Y040/00（2） C01B031/04（2）
C23C016/06（2） H01B001/04（2）
发明人 KIM S O（2） LEE D H（2）
公开年
申请年 2013（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（4）

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Three-dimensional nanostructure used for field-emitting device, is obtained by laminating graphene film and nano-material chosen from nanowires, nanotubes, nanorods, nanoneedles and nanoparticles.

KIM S O, LEE W J, LEE D H, HAN T H, KIM J E, LEE J A, LEE K J