国家/地区 中国（5）
IPC部 H（5） C（3）
IPC大类 H01（5） C23（3）
IPC小类 H01J（5）
IPC H01J009/02（5）
发明人
公开年 2022（5）
申请年 2021（4） 
专利权人

Method for preparing gate self-aligned vertical nano air channel bipolar junction transistor, involves forming dielectric layer on substrate and mesa, and exposing portion of substrate window as drain or source.

JIANG H, YANG F, ZHAO H, HUANG R, WANG J, ZHAO J, WEI Y, ZHANG J, LI M, CHEN F

Preparing petal-shaped graphene field emission cold cathode, comprises selecting and cleaning substrate, selecting silicon sheet and copper foil copper foil as substrate, and growing layer of copper film on substrate surface.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Preparing diamond-multilayer graphene composite cathode material e.g. used in emission display, involves grinding silicon substrate in diamond powder uniformly and compactly, putting grinded silicon substrate into suspension liquid made of diamond powder.

LIU H, GUAN L, WANG B, ZHANG W, XIONG Y

Preparing array vertical graphene field emission cold cathode useful in electronic material preparation technology field, comprises e.g. depositing metal conductive layer on silicon substrate and using chemical vapor deposition technology to grow vertical graphene array on metal catalytic lattice.

ZHANG Y, ZHENG L, ZHENG P, ZHOU K, ZHENG H

Preparing graphene field emission source useful in field emission cathode of electronic device e.g. display device, comprises slowly cooling carbon atom dissolved to metal material to form graphene layer by stage cooling, closing power supply to room temperature, and taking out metal material.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S