国家/地区 韩国（5） 美国（4） 日本（2）
IPC部 C（5）
IPC大类 C01（5） B82（4） H01（2）
IPC小类 C01B（5）
IPC C01B031/04（5） C01B031/02（3） B82B003/00（2）
B82Y040/00（2） C01B031/00（2）
发明人 LEE J（5）
公开年 2010（5）
申请年 2008（2）  2009（2） 
专利权人 KOREA INST S.（2） LEE J（2） LEE W（2）

Method of preparing carbon based sheet e.g. graphene sheet used in FET, involves forming carbon based sheet on substrate by performing annealing process on substrate including carbon-containing material.

WENXU X, MA D, LEE J, XIANYU W, MA T J, I J H

Preparing graphene ribbons, comprises preparing graphitic material composed of e.g. graphene helices, and shortening the graphitic material by applying energy and decomposing the graphitic material into graphene ribbons.

LEE J, LEE S H, LEE W, LEE S, LEE U, LEE J K, LEE W S

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Hydrogen storage material for hydrogen storage device, comprises alkaline earth metal ions and covalent-bonded graphenes having structure by forming junction point with carbon atoms on either end portions of graphene monolayer.

JI S, KIM G, LEE J, PARK N