国家/地区 韩国（3） 美国（3） 日本（2）
IPC部 B（3）
IPC大类 B82（3） C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人 LEE J（3）
公开年 2010（3）
申请年
专利权人

Method of preparing carbon based sheet e.g. graphene sheet used in FET, involves forming carbon based sheet on substrate by performing annealing process on substrate including carbon-containing material.

WENXU X, MA D, LEE J, XIANYU W, MA T J, I J H

Preparing graphene ribbons, comprises preparing graphitic material composed of e.g. graphene helices, and shortening the graphitic material by applying energy and decomposing the graphitic material into graphene ribbons.

LEE J, LEE S H, LEE W, LEE S, LEE U, LEE J K, LEE W S

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T