国家/地区 英国（5）
IPC部 H（4） B（3） C（3）
IPC大类 H01（4） B82（3） C01（3）
IPC小类 H01L（4） B82Y（3） C01B（3）
IPC C01B031/04（3） B82Y030/00（2） B82Y040/00（2）
H01L021/336（2） H01L029/15（2） H01L029/16（2）
H01L029/66（2） H01L029/775（2） H01L029/78（2）
H01L029/786（2） H01L051/00（2）
发明人 DIMITRAKOPOULOS C（2）
公开年 2012（5）
申请年 2011（5）
专利权人 INT BUSINESS.（4）

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Producing intercalating, expanded, and/or exfoliated graphite or graphene species comprises electrolysis utilizing electrode materials comprising graphite, where graphite layers are oriented to plane of a surface of the electrode.

STIRLING C

Graphene based tunable band gap bi-bond layered electronic device e.g. N-type FET, for fabricating integrated circuit, has local gates formed as pair to locally control portion of bilayer graphene layer.

CHEN Z, FRANKLIN A D, HAN S

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A