国家/地区 韩国（5） 美国（5） 中国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 日本（3） 台湾（3）
IPC部 C（5）
IPC大类 C01（5） H01（5） B01（2）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人 LEE J（5）
公开年 2015（5）
申请年 2013（2）  2014（2） 
专利权人 HANWHA CHEM .（3）

Porous silicon-carbon composite used for negative electrode active material, comprises core including active particles containing silicon particles and/or silicon oxide particles and shell layer including graphene coated on core.

HWANG E Y, KIM I Y, LEE J Y, KWON W J, SOHN K N, YANG S B, HUANG Y, KIM I, LEE J, KWON W, SOHN K, YANG S

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Graphene comprises oxygen atom content in predetermined range, and has carbon/oxygen weight ratio of predetermined range.

LEE J S, DO S H, JEON S Y, KONG J H, DO SEUNG H, LEE J, DO S, JEON S, KONG J

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S