国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG X（3）
公开年 2016（3）
申请年 2016（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Photo-resist graphene removing method, involves forming silicon nitride layer on photo-resist graphene part, performing photo-resist acetone leaching part removing process, and performing photo-resist graphene removing process.

DI Z, JIA P, MA J, WANG G, WANG X, XUE Z, ZHANG M, ZHENG X

Graphene screen print electrode, has work electrode main body coated with solid insulation paste that is formed with electrode standard layer, and pair electrode connected with reference electrode that is connected with rubber assembly.

JIN Q, JIN Y, LIU D, WANG X, SHAO Y, ZHAO J, HUANG S