国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人 JIA Y（6）
公开年 2016（6）
申请年 2014（6）
专利权人 SINOPEC CORP（4） SINOPEC SHAN.（4）

Thermal evaporation GeC preparation of graphene that has low cost, large scale, simple and easy operation and high quality graphene product.

CUI C, JIA Y, MA J

Production of sulfur-doped graphene, used in industrial field, involves carrying out ultrasonic peeling of graphite oxide in solvent and obtaining graphene oxide solution which is mixed with sulfur-containing organic compounds.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Synthesizing sulfur-doped graphene comprises ultrasonically peeling the graphite oxide in a solvent, mixing the graphene oxide solution and sulfur-containing organic compounds with ultrasonicating, dispersing and uniformly mixing.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Preparation of sulfur-doped graphene, involves mixing graphite oxide in water, obtaining graphene oxide solution, mixing with sulfur-containing compounds, ultrasonically processing, mixing, and hydrothermally reacting.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Synthesis of sulfur-doped graphene comprises taking graphite oxide in water, ultrasonically peeling off, freeze-drying, mixing with hydrogen sulfide and inert gas, and reacting.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Epitaxial growth of graphene junction on semi-insulating silicon carbide wafer surface for e.g. multipolar device, involves cleaning semi-insulating silicon carbide wafer surface, implanting boron ion on wafer and annealing wafer.

CHEN X, GUO L, JIA Y, WANG Y