国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L031/0216（2）
发明人 GUI Y（2）
公开年 2017（2）
申请年 2016（2） 
专利权人 INST MICROEL.（2）

Method for preparing graphene/gallium arsenide (GaAs) solar battery, involves etching heavily doped gallium GaAs layer between front electrode grid lines to and preparing anti-reflective layer on surface of exposed graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X

Graphene/gallium arsenide solar battery, has hollow area located corresponding to positive electrode grid line and coated with anti-reflection coating, and heavy doping gallium arsenide cap layer arranged with graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X