国家/地区 中国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C30B025/18（2）
发明人 WANG D（2）
公开年 2022（2）
申请年
专利权人 UNIV XIDIAN（2）

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J