国家/地区 中国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/02（2）
发明人
公开年 2022（2）
申请年
专利权人

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N