国家/地区 中国（2）
IPC部 C（2）
IPC大类 C22（2）
IPC小类 C22F（2）
IPC C22F001/02（2）
发明人 WEI W（2）
公开年 2022（2）
申请年
专利权人

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Preparing copper-chromium-zirconium alloy layered belt material with composite deformation of graphene/copper, involves subjecting bulk copper-chromium-zirconium alloy to solid solution treatment, carrying out room temperature iso-channel extruding, low temperature rolling, stacking and vacuum-aging.

WANG D, AN X, DU Q, WEI K, YAO L, WEI W