国家/地区 韩国（2）
IPC部 G（2）
IPC大类 G11（2） H10（2）
IPC小类 G11C（2） H10B（2）
IPC
发明人
公开年 2023（2）
申请年
专利权人 POSTECH ACADIND FOUND（2）

Ion-based three-terminal synapse device for use in neuromorphic system, has first insulating layer formed on substrate and heating element formed between substrate and first insulating layer for supplying heat to synapse element.

HWANGHYUNSANG, LEE J W

Non-volatile memory device comprises word lines extending in first direction on substrate, and channel pattern provided between first bit line and second bit line of each of bit line pairs on blocking insulating film, where channel pattern has ambipolar conduction characteristic.

PARK K, KANG S, JUNG S, PARK J, JO J, KIM J, SONG W, KANG S H, HYOUNG C J