国家/地区 韩国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/02（2）
发明人 JUNG A（2）
公开年 2023（2）
申请年 2022（2）
专利权人 SAMSUNG ELEC.（2）

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Multi bridge channel field effect transistor for use in e.g. memories, has gate insulating layer that surrounds first channel layer, and gate electrode that surrounds first channel layer with gate insulating layer.

KIM C, KIM U, JUNG A, BYUN K, JIN Y, JIN C, JUNG A R, BYUN K E