国家/地区 巴西（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC
发明人
公开年 2013（2）
申请年 2012（2）
专利权人

Graphene ferroelectric device for e.g. optically switchable non-volatile memory comprises graphene transistor channel and ferroelectric gate of graphene transistor channel consisting of linear polarization at applied gate voltage.

OZYILMAZ B, KAHYA O, TOH C T, JAISWAL M, SAHA S

Preparation of functionalized graphene nanoribbons used for e.g. deicing circuit, involves exposing carbon nanotubes to alkali metal source in presence of aprotic solvent and exposing opened carbon nanotubes to electrophile.

TOUR J M, LU W, GENORIO B, TOUR J, TOUR YA M, LU V