国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C30B029/02（3） C01B031/02（2） C01B031/04（2）
发明人
公开年 2013（4）
申请年 2012（4）
专利权人

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Preparation of graphene, involves directly converting amorphous carbide into graphene at low temperature and normal pressure under halogenation condition.

MU S, PENG T