国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C23C014/06（2）
发明人
公开年 2014（2）
申请年 2013（2） 
专利权人

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z