国家/地区 中国（3）
IPC部 B（3）
IPC大类 C23（3）
IPC小类 C23C（3） B82Y（2） C01B（2）
IPC C23C014/06（3）
发明人
公开年 2012（2）
申请年 2012（3）
专利权人

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Graphene structure used in high power pulse magnetron sputtering preparation, has upper layer that is provided with amorphous carbon film and lower layer that is provided with multilayer graphene film.

KE P, WANG A, ZHANG X

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y