国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B029/02（3）
发明人
公开年 2012（2）
申请年 2011（3）
专利权人

Making high-quality graphene involves processing graphene substrate by reducing defect, placing precursor on substrate by transferring graphene sheet, precipitating/growing graphene with carbon tube and growing precursor into graphene strip.

GUO W, YIN J, ZHOU J

Method for preparing regular graphene single-crystal domain utilized for graphene apparatus, involves forming aromatic compound as regular graphene single-crystal domain on metal surface by molecule self-assembly technology.

CHEN X, LIU L, LIU S, WANG L

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O