国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人
公开年 2016（2）
申请年 2014（2）
专利权人

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z