国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（2）
IPC C23C016/01（4）
发明人
公开年 2021（2） 2022（2）
申请年 2021（4）
专利权人

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Method for improving graphene performance by wet soaking and low-temperature annealing, involves removing poly methyl methacrylate photo-resist remaining on graphene during transfer process by annealing in low-pressure and low-temperature atmosphere.

LI M, ZHENG S, WANG J

Graphene composite film comprises graphene composite film main body comprising carbon nano-tube film substrate, and copper substrate.

MAO J

Non-adhesive electrosurgical instrument electrode, has metal electrode surface whose end head is coated with thin film material e.g. graphene, carbon nano tube, carbon fiber, fiber-metal nano-particle composite material.

CAO T, JIA J, YANG Z, LIAN M, SU Y