国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（2） C23C016/26（2）
发明人 ZHOU M（3）
公开年 2012（2）
申请年 2011（3）
专利权人 HAIYANGWANG .（2）

Preparation of doped graphene involves cleaning metal material and drying, subjecting dried substrate in reaction chamber, introducing protective gas, heating, and introducing gaseous carbon-containing and nitrogen-containing materials.

WANG Y, YUAN X, ZHOU M

Preparing silver/graphene nano-composite material comprises e.g. dispersing photocatalyst nano tungsten trioxide grain and adding graphene oxide and silver nitrate to obtain dispersion liquid and adding reductive desulfurization solvent.

YAN J, YI J, ZHANG L, ZHANG N, ZHOU M

Device used in making graphene film comprises furnace and conveyor belt bearing metal material, where the furnace is provided with cooling chamber and reaction chamber, and the cooling chamber and reaction chamber are connected through hole.

WANG Y, YUAN X, ZHOU M