国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C30B029/02（3） C23C016/26（2）
发明人
公开年 2017（3）
申请年 2016（3）
专利权人

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z