国家/地区 中国（3）
IPC部 B（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC B82Y040/00（2）
发明人
公开年 2022（3）
申请年 2021（2） 
专利权人

Etching method of single-sided germanium wafer by coating photoresist on front, back and circumferential directions of germanium wafer respectively to form photoresist film, exposing photoresist film on front side, and developing.

HE Y, CHEN M, WANG Y

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Assembly method of plant device containing lead-free double perovskite quantum dot crystal involves preparing lead-free double perovskite quantum dot crystal, packaging the lead-free double perovskite quantum dot crystal.

CHEN Q, SHI M, ZOU J, JIN D, WAN W, ZHOU Y