国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/188（2）
发明人 CHENG X（2）
公开年 2017（2）
申请年
专利权人 UNIV SHANDON.（2）

Growing large-domain graphene by using hexagonal boron nitride as a seed involves providing substrate, dissolving hexagonal boron nitride in solvent, and then stirring obtained mixture ultrasonically treating the boron nitride particles.

YU F, ZHANG J, YANG Z, SUN L, LI Y, CHENG X, ZHAO X

Method for growing graphene on hexagonal silicon carbide silicon surface used in preparation of graphene single crystal, involves polishing hexagonal silicon carbide wafer, etching wafer, depositing metal substrate and growing graphene.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X