国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 ZHANG Y（2）
公开年
申请年 2022（2）
专利权人

Manufacture of ultra-low absorption sapphire involves doping substance that reduces absorption coefficient of sapphire into aluminum oxide to form mixture, placing mixture into crucible, vacuumizing and heating, necking and seeding, shouldering, performing isometric growth, cooling and annealing.

ZHANG Y, WANG Y, HUANG C, CHEN J, GAO C, ZHAO P, ZHOU N, CHENG G

Reusing garnet substrates in single crystal epitaxial growth, comprises cleaning garnet single crystal substrate, forming double-layer graphene structure on cleaned garnet single crystal substrate, using pulsed laser deposition method to grow garnet seed crystal layer on single crystal substrate.

ZHANG H, ZHANG Y, YU J, ZHANG D, LI H, YANG Q