国家/地区 中国（2）
IPC部 C（2） H（2）
IPC大类 C01（2） C30（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人
公开年 2017（2）
申请年 2016（2）
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L