国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） C01（2）
IPC小类 C30B（4）
IPC C30B029/02（2）
发明人 TU R（3） ZHANG L（3） ZHANG S（3）
公开年
申请年
专利权人 UNIV WUHAN TECHNOLOGY（4）

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L

Preparation of graphene, involves directly converting amorphous carbide into graphene at low temperature and normal pressure under halogenation condition.

MU S, PENG T