国家/地区 中国（4）
IPC部 H（4） B（3）
IPC大类 H01（3） B32（2） B82（2）
H05（2）
IPC小类 B32B（2） B82Y（2） H01L（2）
H05K（2）
IPC B82Y040/00（2） H01L021/04（2） H01L021/336（2）
H01L029/16（2） H01L029/78（2） H05K009/00（2）
发明人 AVOURIS P（4）
公开年 2013（2）
申请年 2011（2） 
专利权人 INT BUSINESS.（4）

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Method for cloaking object by absorbing electromagnetic radiation at microwave and terahertz frequencies, involves placing layers of graphene sheet and transparent dielectric layer on or about object, and absorbing portion of frequencies.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Semiconductor structure of semiconductor device e.g. MOSFET used in electronic device e.g. personal computer, has nitride layer which is formed on graphene layer between source electrode and drain electrode.

AVOURIS P, NEUMAYER D, ZHU W, NEUMAYER D A

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L