国家/地区 西班牙（4）
IPC部 B（4）
IPC大类 B82（4） C30（4） B32（3）
C01（3） C23（3） B05（2）
B21（2）
IPC小类 B82Y（4）
IPC B82Y040/00（4） B82Y030/00（3） C01B031/02（3）
C01B031/04（3） C30B029/02（3） C01B032/194（2）
C23C016/26（2） C30B033/00（2）
发明人
公开年 2011（2）
申请年
专利权人

Process for transferring nanolayers of e.g. graphene, involves placing nanolayer, separating nanolayer from initial substrate, and removing liquid until nanolayer is deposited on final substrate.

BOSCA MOJENA A, PEDROS AYALA J, MARTINEZ RODRIGO J, CALLE GOMEZ F, PALACIOS GUTIERREZ T, BOSCA M, PEDROS A, MARTINEZ R, CALLE G, PALACIOS G, MOJENA A, AYALA J, RODRIGO J, GOMEZ F, GUTIERREZ T

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V