国家/地区 法国（2）
IPC部 B（2） C（2）
IPC大类 B82（2） C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人
公开年 2011（2）
申请年 2009（2）
专利权人

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Making dispersion of graphene particles or sheets comprises providing block of solid material made of graphite, scraping material surface of substrate and dipping substrate in liquid medium and subjecting liquid medium to ultrasound.

JANOWSKA I, BEGIN D, CHIZARI K, ERSEN O, BERNHARDT P, ROMERO T, LEDOUX M, PHAM H C