国家/地区 香港（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L000/00（2）
发明人
公开年 2017（2）
申请年 2016（2）
专利权人

Graphene infrared sensor i.e. quantum sensor, has photonic crystal layer formed in remaining part of upper surface of electrode layer, in upper surface of material layer and in remaining part of upper surface of silicon wafer.

LAI W, LO W, TANG X, POON C, CHENG W

Semiconductor device, has resin material that is provided for covering semiconductor chip which is coupled onto substrate through bump electrode and that is provided for containing resin and graphene particles.

MATSUBARA Y, YOSHIHISA M