国家/地区 印度（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC B22F001/02（2） C01B032/194（2） H01M004/36（2）
H01M004/38（2）
发明人
公开年 2021（3）
申请年 2020（4）
专利权人

Nitrogen doping in chemical vapor deposition (CVD) graphene, by initiating by controller, and performing annealing process using ammonia gas in pressure chamber on CVD graphene at pre-defined temperature for pre-defined period of time, where pressure chamber is maintained at atmospheric pressure.

SINGLA R, KOTTANTHARAYIL A

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Composite powder useful for powder metallurgy and additive manufacturing processes, comprises particles with a core of an iron based material and a coating of a graphene based material.

JANSSON U, TIDEN S, TAHER M, DIAZ L, REMONEN T, JANSSEN U

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S