国家/地区 日本（3）
IPC部 B（3）
IPC大类 C01（3） H01（3） B82（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年 2010（2）
申请年 2008（3）
专利权人

Semiconductor device for liquid crystal display, includes transparent substrate having graphene film, graphite film, or amorphous carbon film such that carbon film is transferred to substrate from carbon material substrate by laser beam.

HIURA H, KANAYAMA T, TADA T

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z