国家/地区 日本（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C30B029/02（2）
发明人 HAYASHI K（2） KONDO O（2）
公开年
申请年 2021（2） 
专利权人 FUJITSU LTD（3）

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K