国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人
公开年 2017（2）
申请年 2017（2）
专利权人

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D