国家/地区 中国（3）
IPC部 B（3）
IPC大类 B32（3） B82（3） C01（3）
H01（2）
IPC小类 B32B（3）
IPC C01B031/04（3）
发明人 SONG J（3） SUNG C（3） LIN I（2）
公开年
申请年 2012（2） 
专利权人 SUNG C（3）

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J