国家/地区 台湾（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） H01L（3） B32B（2）
C01B（2）
IPC C23C016/26（3）
发明人
公开年 2011（3）
申请年
专利权人

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V