国家/地区 美国（3）
IPC部 C（3）
IPC大类 H01（3） C01（2） C23（2）
IPC小类 H01L（3）
IPC C23C016/26（2） H01L021/285（2） H01L021/768（2）
发明人
公开年 2023（3）
申请年 2021（3）
专利权人

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Preparing graphene useful in transistor, comprises supplying substituted alkyne based precursor to chamber including first zone and second zone, vaporizing or sublimating precursor in first zone, and depositing sublimed precursor.

LEE H Y, SEO S, CHOI J, LEE H

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S