国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（3） H01（3） B82（2）
IPC小类 C01B（3）
IPC B82B001/00（2） B82B003/00（2） C01B031/02（2）
C01B031/04（2） H01B001/04（2） H01L021/20（2）
发明人 CHOI B（3）
公开年 2011（3）
申请年 2010（3）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Composite structure useful in logic device, memory device and supercapacitor, comprises first graphene, second graphene separated apart from first graphene, one-dimensional nanostructure, and substrate on which graphenes is disposed.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, KIM B S, LEE E K, WHANG D M

Composite structure for manufacturing a logic device, a memory device, a supercapacitor and a flexible and stretchable device, comprises graphene sheets disposed at a regular interval, and a nanostructure oriented through the sheets.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, WHANG D M, KIM B S, LEE E K