国家/地区 美国（2）
IPC部 B（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2）
IPC H01B001/04（2）
发明人
公开年 2011（2）
申请年 2009（2）
专利权人

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M