国家/地区 美国（2）
IPC部 B（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 JIANG M（2）
公开年
申请年
专利权人 SHANGHAI INS.（2）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X