国家/地区 世界知识产权组织（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG X（2）
公开年 2015（2）
申请年
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（2）

Method for manufacturing unipolar graphene transistor, involves applying electric field of which electric field intensity is changed along connection direction of source and drain to graphene layer on substrate.

QIU X, WANG X, CHENG Z

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X