国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 CHEN J（2）
公开年 2012（2）
申请年
专利权人 CHINESE ACAD.（2） SHANGHAI INS.（2）

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X